SSG4403

SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg Ratings -30 ±12 -6.1 -5.1 -60 2.5 -55 ~ +150 0.02 Unit V V A A A W ℃ W/℃ Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rθj-amb Value 50 Unit ℃/W 01-June-2005 Rev. A Page 1 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=55℃) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. -30 -0.7 - Typ. 11 9.4 2 3 7.6 8.6 44.7 16.5 940 104 73 Max. -1.3 ±100 -1 -5 50 61 117 - Unit V V S nA uA uA Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±12V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-6.1A Static Drain-Source On-Resistance2 RDS(ON) - mΩ VGS=-4.5V, ID=-5A VGS=-2.5 V, ID=-1 A ID=-5 A VDS=-15 V VGS=-4.5 V Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - nC ns VDS=-15 V ID=-10 V RG=6 Ω RL=2.4 Ω pF VGS=0 V VDS=-15 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Reverse Recovery Time2 Reverse Recovery Charge Notes: Symbol VSD IS Trr Qrr Min. - Typ. 22.7 15.9 Max. -1.0 -4.2 - Unit V A ns nC Test Conditions IS=-1A, VGS=0 V IS = -5A, VGS = 0V, Tj=25°C dl/dt = 100A/us 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 2 3. Mounted on 1 in copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad. 01-June-2005 Rev. A Page 2 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE 01-June-2005 Rev. A Page 3 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE (cont’d) 01-June-2005 Rev. A Page 4 of 4