SSG4407P

SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications A C N J K H G F E REF. APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4 .0 0 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25° C TA=70° C ID IDM IS PD TJ, TSTG Ratings -30 ±25 -15 -11 ±50 -2.1 3.1 2.3 -55 ~ 150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA=25° C TA=70° C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 1 t≦5 sec t≦5 sec RθJC RθJA 25 50 ° /W C ° /W C Thermal Resistance Junction-Ambient (Max.) Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 1 of 4 SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Max. Unit Teat Conditions VGS(th) IGSS IDSS -1 - 44 -0.7 ±100 -1 V nA µA VDS=VGS, ID= -250µA VDS=0, VGS= ±25V VDS= -24V, VGS=0 VDS= -24V, VGS=0, TJ=55° C -5 9 13 11 2 ID(on) -50 - A VDS= -5V, VGS= -10V VGS= -10V, ID= -13A Drain-Source On-Resistance 1 RDS(ON) - m VGS= -4.5V, ID= -11A VGS= -10V,ID= -13 A,TJ=55° C Forward Transconductance Diode Forward Voltage 1 gfs VSD - S V VDS= -5V, ID= -13A IS=2.1A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 37 10 14.5 nC ID= -13A VDS= -15V VGS= -10V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) Tr Td(off) Tf 19 11 121 68 nS VDD= -15V ID= -1A VGEN= -10V RL= 6 Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 2 of 4 SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 3 of 4 SSG4407P Elektronische Bauelemente -15A, -30V, RDS(ON) 9 mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 4 of 4