SSG4410

SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES     Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching A C N J K H G F E MARKING 4410SC   REF. A B C D E F G  = Date Code Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 3K LeaderSize 13’ inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient (Max.) TJ, TSTG RθJA Thermal Resistance Ratings 50 °C / W Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD Ratings 30 ±20 10 8 50 2.5 0.02 -55 ~ 150 Unit V V A A A W W / °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Dec-2010 Rev. B Page 1 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(TJ=25°C) Drain-Source Leakage Current(TJ=55°C) Static Drain-Source On-Resistance Total Gate Charge 2 Gate-Source Chagre Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage 2 Symbol BVDSS △BVDSS / △TJ Min. 30 1.0 - Typ. 0.037 20 - Max. 3.0 ±100 1 25 Unit V V / °C V S nA μA μA mΩ nC Teat Conditions VGS=0V, ID =250uA Reference to 25°C, ID=1mA VDS=VGS, ID =250uA VDS=15V, ID =10A VGS=±20V VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=15V, ID =10A, VGS=5V VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS VSD 11.5 13.5 16.5 20 20 3 11 7.5 10.2 29 33 955 555 204 Source-Drain Diode 1.3 2.3 50 nS VDS=25V, VGS=5V I D=1A, RD=25Ω, RG=3.3Ω VDS=15V VGS=0V f=1.0MHz pF V A A IS=2.3A, VGS= 0V, TJ=25°C VD = VG = 0V, VS= 1.3V Continuous Source IS Current (Body Diode) Pulsed Source ISM Current (Body Diode) 1 Notes: 1. Pulse width limited by safe operating area. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Dec-2010 Rev. B Page 2 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Dec-2010 Rev. B Page 3 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Dec-2010 Rev. B Page 4 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Dec-2010 Rev. B Page 5 of 5