SSG4435

SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES    A C N J K Low on-resistance Simple Drive Requirement Fast switching H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F E REF. REF. H J K L M N MARKING 4435SC    = Date Code A B C D E F G Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 3K LeaderSize 13’ inch S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1.2 Power Dissipation Maximum Junction to Ambient Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG 3 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM PD RθJA Ratings -30 ±20 -8 -6 -50 2.5 50 0.02 -55~150 Unit V V A A W °C / W W / °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. B Page 1 of 4 SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Forward Transfer Conductance Gate-Body Leakage Zero Gate Voltage Drain Current TA = 25°C TA = 70°C Symbol BVDSS △BVDS/△Tj VGS(th) Gfs IGSS IDSS Min. -30 -1 - Typ. Static -0.037 20 12.4 3.4 5.1 24.2 23.8 58.2 9 1345 194 158 Max. -3 ±100 -1 -5 20 35 - Unit V V / °C V S nA μA μA mΩ Test condition VGS=0, ID=-250μA Reference to 25°C, ID= -1mA VDS=VGS, ID= -250μA VDS= -10V, ID= -8A VGS=±20V VDS= -30V, VGS=0 VDS= -24V, VGS=0 VGS= -10V, ID= -8A VGS= -4.5V, ID= -5A ID= -12A VDS= -20V VGS= -4.5V Drain-Source On-Resistance 2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC nS VDS= -15V ID= -1A VGS= -10V RG=3.3Ω pF VGS=0 VDS= -15V f=1.0MHz Source-Drain Diode Forward On Voltage 2 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) VDS Is ISM -0.75 -1.2 -2.1 -50 V A A IS= -2.1A, VGS=0, Tj=25°C VD=VG=0V, VS= -1.2V Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300us, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; 125°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. B Page 2 of 4 SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. B Page 3 of 4 SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. B Page 4 of 4