SSG4436N

SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E REF. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG Ratings 30 20 22 18 60 2.9 3.1 2.2 -55 ~ 150 Unit V V A A A A W W °C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA 40 80 °C / W °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. D Page 1 of 4 SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 30 - Typ. Static 90 0.7 Max. 3 100 1 5 4.6 6.8 - Unit V nA μA μA A mΩ S V Teat Conditions VDS= VGS, ID= 250μA VDS= 0V, VGS= 20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 12A VGS= 4.5V, ID= 10A VDS= 15V, ID= 18.6A IS= 2.3A, VGS= 0V Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 25 6 9 20 13 82 43 2 nS nC ID= 18.6A VDS= 15V VGS= 4.5V VDD= 15V ID= 1A VGEN= 10V RL= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. D Page 2 of 4 SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. D Page 3 of 4 SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Mar-2011 Rev. D Page 4 of 4