SSG4470STM

SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m FEATURES    Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. SOP-8 B PRODUCT SUMMARY VDSS(V) d 40 PRODUCT SUMMARY RDS(on) m(Max 10@VGS= 10V 13@VGS= 4.5V ID(A) 10 A C N J K L D M MARKING H G F E REF. D 8 D 7 D 6 D 5 A B C D E F G STM4470    4 G = Date Code Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 1 S 2 S 3 S MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TJ= 25°C Pulsed Drain Current b Drain-Source Diode Forward Current Maximum Power Dissipation a Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient a a a SYMBOL VDS ID IDM IS PD TJ, TSTG RθJA THERMAL RESISTANCE RATINGS d RATINGS 40 ±20 10 39 1.7 2.5 -55 ~ 150 50 UNIT V V A A A W °C °C / W VGS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Apr-2010 Rev. A Page 1 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage d Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gfs CISS COSS CRSS Td(on) Tr Td(off) Tf Qg Qgs Qgd MIN. 40 1 20 - TYP. 1.7 8 11 20 1020 240 135 15 22 48 12 19.5 9.8 2 5.5 MAX. 1 ±100 3 10 13 - UNIT V μA nA V mΩ A S TEST CONDITIONS VGS= 0V, ID= 250μA VDS= 32V, VGS= 0V VGS= ±20V, VDS= 0V VDS= VGS, ID= 250μA VGS= 10V, ID= 10A VGS= 4.5V, ID= 6A VDS= 10V, VGS= 10A VDS= 10V, ID= 10A OFF CHARACTERISTICS ON CHARACTERISTICS b DYNAMIC CHARACTERISTICS C pF VDS= 20V, VGS= 0V, f= 1.0MHz SWITCHING CHARACTERISTICS C VDD= 20V ID= 1A VGS= 10V RGEN= 3.3Ω VDS= 20V, ID= 10A, VGS= 10V nC VDS= 20V, ID= 10A, VGS= 4.5V VDS= 20V, ID= 10A, VGS= 10V nS DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage Notes a. b. c. d. Surface Mounted on FR4 Board, t ≦ 10 sec. Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2％. Guaranteed by design, not subject to production testing. Guaranteed when external Rg= 3.3Ω and tf ＜ tf max. VSD - 0.73 1.2 V VGS= 0V, IS= 1.7A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Apr-2010 Rev. A Page 2 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Apr-2010 Rev. A Page 3 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Apr-2010 Rev. A Page 4 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Apr-2010 Rev. A Page 5 of 5