SSG4480N

SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOP-8 B Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATIONS    L D M White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits H G A C N J K PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch REF. A B C D E F G F E Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG Thermal Resistance Ratings Ratings 80 ±20 7.1 6 50 3.8 3.1 2.2 -55 ~ 150 40 80 Unit V V A A A A W W °C °C / W °C / W Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range t≦10 sec Steady State Thermal Resistance Junction-ambient (Max.) 1 Notes 1. 2. Surface Mounted on 1” x 1” FR4 Board. RθJA Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. C Page 1 of 4 SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-Resistance1 Forward Transconductance1 Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf CISS COSS CRSS Min. 1 20 - Typ. Static 20 0.76 Max. ±10 1 10 41 57 - Unit V μA μA A mΩ S V Teat Conditions VDS= VGS, ID=-250μA VDS= 0V, VGS= ±20V VDS=64V, VGS=0V VDS=64V, VGS=0V, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=5.4A VGS=4.5V, ID=4.6A VDS=15V, ID=5.4A IS=2A, VGS=0V ID=5.4A VDS=40V VGS=4.5V VDD=40V ID=5.4A VGEN=10V RL=7.5Ω RGEN=6Ω VDS=15V VGS=0V f=1Mhz Dynamic 2 19.5 4.5 10 12.8 24 52.3 46 1522 129 87 nC nS pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. C Page 2 of 4 SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. C Page 3 of 4 SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. C Page 4 of 4