SSG4490N

SSG4490N Elektronische Bauelemente 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N J K FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOIC-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG RθJC RθJA Thermal Resistance Ratings Ratings 100 ±20 5.2 3.9 50 2.3 3.1 2.2 -55 ~ 150 25 50 Unit V V A A A A W W °C °C / W °C / W Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Junction-Case (Max.) 1 Notes 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t≦5 sec Thermal Resistance Junction-ambient (Max.) 1 t≦5 sec http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. B Page 1 of 2 SSG4490N Elektronische Bauelemente 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf Min. 1 20 - Typ. Static 40 0.7 Max. ±100 1 25 78 92 - Unit V nA μA μA A mΩ S V Teat Conditions VDS= VGS, ID=-250μA VDS= 0V, VGS=20V VDS=80V, VGS=0V VDS=80V, VGS=0V, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=5.2A VGS=4.5V, ID=4.8A VDS=15V, ID=5.2A IS=2.3A, VGS=0V ID=5.2A VDS=15V VGS=4.5V Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Dynamic 2 12.5 2.6 4.6 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. nC - 20 9 70 20 nS VDD=25V ID=1A VGEN=10V RL=25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. B Page 2 of 2