SSG4492N

SSG4492N Elektronische Bauelemente 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E REF. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG Ratings 100 Unit V V A A A A W W °C ±20 9 7.3 50 2.3 3.1 2.2 -55 ~ 150 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range 1 1 Thermal Resistance Ratings Maximum Junction to Case t ≦ 5 sec t ≦ 5 sec RθJC RθJA 25 50 °C / W °C / W Maximum Junction to Ambient Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Feb-2011 Rev. A Page 1 of 2 SSG4492N Elektronische Bauelemente 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 20 - Typ. Static 40 0.7 Max. - Unit V nA μA A mΩ S V Test conditions VDS=VGS, ID=250μA VDS=0, VGS=20V VDS=80V, VGS=0 VDS=80V, VGS=0, TJ= 55°C VDS=5V, VGS=10V VGS=10V, ID=2A VGS=4.5V, ID=2A VDS=15V, ID=2A IS=2A, VGS=0 ±100 1 25 26 36 2 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 12.5 2.6 4.6 nC ID=2A VDS=15V VGS=4.5V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) Tr Td(off) Tf 20 9 70 20 nS VDD=25 ID=1A VGEN=10V RL=25Ω Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Feb-2011 Rev. A Page 2 of 2