SSG4499P

SSG4499P Elektronische Bauelemente -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13’ inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG Ratings -60 ±20 -6.8 -6.3 -30 -2.5 3.1 2.6 -55 ~ 150 Unit V V A A A A W W °C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range 1 Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) t ≦ 10 sec RθJA 50 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 1 of 2 SSG4499P Elektronische Bauelemente -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -20 8 ±100 -1 -10 45 60 -1.2 V nA μA A mΩ S V VDS= VGS, ID= -250μA VDS=0, VGS= ±20V VDS= -48V, VGS=0 VDS= -48V, VGS=0, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -6.8A VGS= -4.5V, ID= -5.9A VDS= -15V, ID= -6.8A IS= -2.5A, VGS=0 Max. Unit Teat Conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 18 5 2 8 10 35 12 nS nC ID= -6.8A VDS= -30V VGS= -4.5V VDD= -30V ID= -1A VGEN= -10V RL=30Ω RG=6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 2 of 2