SSG4512CE

SSG4512CE Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast Switch Speed. High performance trench technology. A C L D M N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4 .0 0 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. E APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F G REF. H J K L M N PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch S1 D1 D1 G1 S2 D2 G2 D2 MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TJ, TSTG Ratings N-Ch P-Ch Unit V V A A A A W W °C 30 ±20 6.9 5.4 20 1.3 2.1 1.3 -55~150 -30 ±20 -5.2 -6.8 -20 -1.3 2.1 1.3 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Maximum Junction-ambient Maximum Junction-Case 1 1 t