SSG4520H_12

SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J K H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. F E REF. A B C D E F G REF. H J K L M N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. Top View PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Symbol N-CH VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG 20 ±8 6.6 5 20 2.2 Rating P-CH -20 ±8 -5.2 -3.8 -20 -2.2 2.1 1.3 -55 ~ 150 Unit V V A A A A W W °C Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec Steady State RθJA 62.5 110 °C / W °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 1 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Ch N P N P N P N P N Drain-Source On-Resistance 1 RDS(ON) P Diode Forward Voltage Forward Transconductance 1 VSD gfs N P N P - Min. 1 -1 10 -10 - Typ. Static 0.7 -0.73 10 10 2 Max. ±100 ±100 1 -1 47 55 79 110 Unit Teat Conditions VDS=VGS, ID=250μA VDS=VGS, ID= -250μA VDS=0, VGS=8V VDS=0, VGS= -8V VDS=8V, VGS=0 VDS= -8V, VGS=0 VDS=5V, VGS=4.5V VDS= -5V, VGS= -4.5V VGS=4.5V, ID=5.3A VGS=2.5V, ID=5A VGS= -4.5V, ID= -4.2A VGS= -2.5V, ID= -3.8A VGS=0, IS=1.1A VGS=0, IS= -1.1A VDS=10V, ID=5.3A VDS= -10V, ID= -4.2A Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 VGS(th) IGSS IDSS ID(on) V nA μA A mΩ V S Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf N P N P N P N P N P N P N P N P N P N P 439 683 78 90 68 75 6 11 0.9 2.8 2.1 2.7 7 10 24 20 35 49 19 21 N-Channel VDS=15V, VGS=0, f=1MHz pF P-Channel VDS= -15V, VGS=0, f=1MHz nS N-Channel VDD=10V, VGEN=4.5V ID=5.3A, RGEN=6Ω, RL=1.8Ω P-Channel VDD= -10V, VGEN= -4.5V ID= -4.2A, RGEN=6Ω, RL=2.3Ω nC P-Channel ID= -4.2A, VDS= -10V, VGS= -4.5V N-Channel ID=5.3A, VDS=10V, VGS=4.5V Notes: 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 2 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 3 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 4 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 5 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2012 Rev. D Page 6 of 6