SSG4542C

SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES  A C N J K    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology H G F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range t≦ 10 sec Steady State SYMBOL VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG Thermal Resistance Ratings N-CH 40 20 8.3 6.8 ±50 2.3 2.1 1.3 P-CH -40 -20 -7.6 -6.3 ±50 -2.1 2.1 1.3 Unit V V A A A A W W °C °C / W °C / W -55 ~ 150 62.5 110 Maximum Junction-to-Ambient 1 Notes: 1. 2. Surface Mounted on 1” x 1” FR4 Board. RθJA Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 1 of 6 SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Ch N P N P N P N P N Drain-Source On-Resistance 1 RDS(ON) P Forward Transconductance 1 gfs N P N P N P N P N P N P N P N P N P N P N P Min. 1 -1 25 -50 Typ. Static Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 VGS(th) IGSS IDSS ID(on) 1.5 -1.4 6 7 2nA 12nA 14 17 28 35 40 31 Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Max. 3 -3 ±100 ±100 1 -1 22 27 30 40 30 30 7 12 10 30 3000 4000 600 600 400 400 40 30 20 40 200 200 40 100 Unit Teat Conditions VDS= VGS, ID= 250μA VDS= VGS, ID= -250μA VDS= 0V, VGS= 20V VDS= 0V, VGS= -20V VDS= 32V, VGS= 0V VDS= -32V, VGS= 0V VDS= 5V, VGS= 10V VDS= -5V, VGS= -10V VGS= 10V, ID= 8.3A VGS= 4.5V, ID= 7.3A VGS= -10V, ID= -7.6A VGS= -4.5V, ID= -6.2A VDS= 15V, ID= 8.3A VDS= -15V, ID= -7.6A V nA μA A mΩ S Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 13 14 3.3 5.8 4.5 12 1317 1583 272 278 169 183 20 15 9 16 70 62 20 46 nC N-Channel ID= 8.3A, VDS= 15V, VGS= 4.5V P-Channel ID= -7.6A, VDS= -15V, VGS= -4.5V pF N-Channel f= 1MHz, VDS= 15V, VGS= 0V P-Channel f= 1MHz, VDS= -15V, VGS= 0V nS N-Channel VDD= 15V, VGS= 10V ID= 1A, RGEN= 25Ω P-Channel VDD= -15V, VGS= -10V ID= -1A, RGEN= 15Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 2 of 6 SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 3 of 6 SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 4 of 6 SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 5 of 6 SSG4542C Elektronische Bauelemente N-Ch: 8.3 A, 40 V, RDS(ON) 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Dec-2010 Rev. B Page 6 of 6