SSG4639STM

SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m FEATURES     Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. ESD Protected. SOP-8 B PRODUCT SUMMARY VDSS(V) -30 PRODUCT SUMMARY RDS(on) m( 8.5@VGS= -10V 13@VGS= -4.5V ID(A) -14 A C N J K L D M MARKING D 8 D 7 D 6 D 5 H G F E REF. A B C D E F G STM4639    4 G = Date Code 1 S 2 S 3 S Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b SYMBOL VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM EAS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG RθJA THERMAL RESISTANCE RATINGS RATINGS -30 ±20 -14 -11.2 -79 180 2.5 1.6 -55 ~ 150 50 UNIT V V A A A mJ W W °C °C / W Single Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient a http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-May-2010 Rev. B Page 1 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuius Drain-Source Diode Forward Current Diode Forward Voltage b Notes a. b. c. d. Surface Mounted on FR4 Board, t ≦ 10 sec. Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2％. Guaranteed by design, not subject to production testing. Starting TJ=25°C, L=3.0mH, VDD=30V, VGS=10V. (See Figure13) SYMBOL BVDSS IDSS IGSS VGS(th) RDS(ON) gfs CISS COSS CRSS Td(on) Tr Td(off) Tf Qg Qgs Qgd MIN. -30 -0.8 - TYP. -1.7 7 9.8 32 4049 641 351 24 68 484 188 95 40 6 23 MAX. -1 ±10 -2.0 8.5 13 C UNIT V μA μA V mΩ S TEST CONDITIONS VGS=0V, ID=250μA VDS= -24V, VGS=0V VGS=±20V, VDS=0V VDS= VGS, ID=-250μA VGS=-10V, ID=-14A VGS=-4.5V, ID=-11.3A VDS=-10V, ID=-14A OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS - pF VDS=-15V, VGS=0V, f=1.0MHz SWITCHING CHARACTERISTICS C VDD=-15V ID=-1A VGS=-10V RGEN=3Ω VDS=-15V, ID=-14A, VGS=-10V nC VDS=-15V, ID=-14A, VGS=-4.5V VDS=-15V, ID=-14A, VGS=-10V nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD -0.7 -2.0 -1.2 A V VGS=0V, IS=-2.0A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-May-2010 Rev. B Page 2 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-May-2010 Rev. B Page 3 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-May-2010 Rev. B Page 4 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-May-2010 Rev. B Page 5 of 5