SSG4801

SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. SOP-8 B L D M FEATURES    A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S1 D1 G1 D1 D2 D2 S2 G2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Total Power Dissipation 1 Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient (Max.) Notes： 1. Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2% 1 Symbol VDS VGS TA = 25°C TA = 70°C TA = 25°C ID IDM PD TJ, TSTG RθJA Ratings -30 ±12 -5 -4.2 -30 2 0.016 -55 ~ 150 62.5 Unit V V A A W W / °C °C °C / W Thermal Resistance Ratings http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A Page 1 of 4 SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance 2 Gate-Source Leakage Current Drain-Source Leakage Current TJ=25°C TJ=55°C Symbol BVDSS VGS(th) gfs IGSS IDSS Min -30 -0.5 - Typ 11 9.5 2.0 3.1 12 4 37 12 952 103 77 Max -1.0 ±100 -1 -5 50 65 120 - Unit V V S nA μA μA mΩ Test condition VGS=0V, ID = -250uA VDS=VGS, ID = -250uA VDS= -5V, ID = -5A VGS= ±12V VDS= -24V, VGS=0V VDS= -24V, VGS=0V VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A VGS= -2.5V, ID= -1A VDS= -15V, ID = -5A, VGS= -4.5V Static Drain-Source On-Resistance 2 Total Gate Charge 2 Gate-Source Chagre Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS nC nS VDS= -15V, VGS= -10V RL=3Ω, RG=6Ω VDS= -15V VGS=0V f=1.0MHz pF Source-Drain Diode Forward On Voltage VSD -1.2 V IS= -1.7A, VGS=0V Notes： 1 Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A Page 2 of 4 SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A Page 3 of 4 SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A Page 4 of 4