SSG4825PE

SSG4825PE Elektronische Bauelemente -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N J K FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D D D D ESD Protection Diode 3KV S S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Junction-Case (Max.) Notes: 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. Any changes of specification will not be informed individually. 1 Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG t ≦ 5 sec t ≦ 5 sec RθJC RθJA Thermal Resistance Ratings Ratings -30 Unit V V A A A A W W °C °C / W °C / W ±25 -11.5 -9.3 ±50 -2.1 3.1 2.3 -55 ~ 150 25 50 Thermal Resistance Junction-Ambient (Max.) 1 http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Page 1 of 2 SSG4825PE Elektronische Bauelemente -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Max. Unit Teat Conditions V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -30 -1 -50 - 29 -0.8 Dynamic 2 - V V μA μA μA A mΩ S V VGS= 0V, ID= -250μA VDS= VGS, ID= -250μA VDS= 0V, VGS= ±25V VDS= -24V, VGS= 0V VDS= -24V, VGS= 0V, TJ= 55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -11.5A VGS= -4.5V, ID= -9.3A VDS= -15V, ID= -11.5A IS= 2.5A, VGS= 0V ±1 -1 -5 13 19 - Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1 2 Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf - 25 11 17 2300 600 300 15 13 100 54 nS pF nC ID= -11.5A VDS= -15V VGS= -5V VDS= -15V VGS= 0V f= 1MHz VDD= -15V ID= -1A VGEN= -10V RL= 6Ω Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 2 of 2