SSG4842N

SSG4842N Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4 .0 0 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D D D D PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch S S G MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings 40 20 23 19 60 2.9 3.1 2.2 -55~150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA 40 80 ° /W C ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. A Page 1 of 2 SSG4842N Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) 1 Min. 1 30 - Typ. Static 90 0.7 2 Max. 100 1 Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55° C 5 9 m 12 S V A VDS=5V, VGS=10V VGS=10V, ID=23A VGS=4.5V, ID=20A VDS=15V, ID=23A IS=2.3A, VGS=0 Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 25 6 9 20 13 82 43 nS nC ID=23A VDS=15V VGS=4.5V VDD=15V ID=1A VGEN=10V RL=6 Notes: 1. Pulse test：PW≦300µs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. A Page 2 of 2