SSG4874N

SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N J K FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range 1 Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG t ≦ 10 sec Steady State Thermal Resistance Ratings Ratings 30 20 16.8 14.2 50 2.3 3.1 2.2 -55 ~ 150 40 80 Unit V V A A A A W W °C °C / W °C / W Thermal Resistance Junction-Ambient (Max.) 1 RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 1 of 4 SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 9 40 0.7 Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 15 3 5 1642 579 279 15 10 54 26 40 10 20 4000 2000 600 40 30 nS 110 60 VDD= 15V ID= 1A VGEN= 10V RL= 6Ω pF VDS= 15V VGS= 0V f= 1MHz nC ID= 16.8A VDS= 15V VGS= 4.5V 12 S V 40 7 5 9 mΩ VGS= 4.5V, ID= 16.1A VDS= 15V, ID= 16.8A IS= 2.3A, VGS= 0V μA A VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 16.8A 1 1.5 1.2 10 3 100 1 V nA μA VDS= VGS, ID= 250μA VDS= 0V, VGS= 20V VDS= 24V, VGS= 0V Max. Unit Teat Conditions Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 2 of 4 SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 3 of 4 SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 4 of 4