SSG4930N
Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
SOP-8
B
L
D M
A
C N
FEATURES
J H G
K
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
F
E
REF. A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K LeaderSize 13’ inch
S G S G D D D D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.)
Notes: 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature.
1 1
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG t ≦ 10 sec Steady State Thermal Resistance Ratings RθJA
Ratings 30 ±12 5.0 4.1 ±30 1.7 2.1 1.3 -55 ~ 150 62.5 80
Unit V V A A A A W W °C °C / W °C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 1 of 4
SSG4930N
Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Static Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes: 1. 2. Pulse test:PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing.
1
Max.
Unit
Teat Conditions
VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf
0.7 20 -
22 0.7 Dynamic 6.3 0.9 1.9 257 62 30 22 40 50 20
2
±100 1 25 58 82 -
V nA μA μA A mΩ S V
VDS= VGS, ID= 250μA VDS= 0V, VGS= ±12V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 4.5V VGS= 4.5V, ID= 5A VGS= 2.5V, ID= 4.2A VDS= 15V, ID= 5A IS= 1.7A, VGS= 0V
nC
ID= 5A VDS= 15V VGS= 4.5V
pF
VDS= 15V VGS= 0V f= 1MHz
nS
VDD= 15V ID= 1A VGEN= 4.5V RL= 15Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 2 of 4
SSG4930N
Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 3 of 4
SSG4930N
Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 4 of 4
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