SSG4935P

SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. SOP-8 B L D M A C N FEATURES     J H G K Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability.. Extended VGS range (±25) for battery pack applications. F E REF. PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY RDS(on) (m 21@VGS= -10V 35@VGS= -4.5V ID(A) -7.8 -6.0 S D A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. G D D D S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) Total Power Dissipation a Operating Junction & Storage Temperature Range t≦10 sec Steady State a SYMBOL VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG THERMAL RESISTANCE RATINGS RATINGS -30 ±25 -7.8 -6.2 ±30 -1.7 2.0 1.3 -55 ~ 150 62.5 110 UNIT V V A A A A W W °C °C / W °C / W Thermal Resistance Junction-ambient (Max.) a Notes a. b. Surface Mounted on 1” x 1” FR4 Board. RθJA Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev. A Page 1 of 4 SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. STATIC Gate Threshold Voltage Gate-Body Leakage Current VGS(th) IGSS -1 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) -40 Drain-Source On-Resistance a RDS(ON) Forward Transconductance a Diode Forward Voltage gfs VSD 28 22 -0.7 DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. MAX. UNIT TEST CONDITIONS 19 -3 ±100 -1 -5 21 V nA μA μA A VDS= VGS, ID= -250μA VDS= 0V, VGS= ±25V VDS= -24V, VGS= 0V VDS= -24V, VGS= 0V, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -7.8A mΩ 35 -1.2 S V VGS= -4.5V, ID= -6.0A VDS= -10V, ID= -7.8A IS= -1.7A, VGS= 0V Qg Qgs Qgd Td(on) Tr Td(off) Tf - 15 5.2 5.8 15 12 62 46 nS nC ID= -7.8A VDS= -15V VGS= -5V VDD= -15V ID= -1A VGEN= -10V RL= 6Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev. A Page 2 of 4 SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev. A Page 3 of 4 SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev. A Page 4 of 4