SSG4940N

SSG4940N Elektronische Bauelemente 8.3 A, 40 V, RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range t ≦ 10 sec Steady-State Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG THERMAL RESISTANCE RATINGS Ratings 40 Unit V V A A A A W W °C °C / W °C / W ±20 8.3 6.8 50 2.3 2.1 1.3 -55 ~ 150 62.5 110 Maximum Junction to Ambient a Notes 1 2 Surface Mounted on 1” x 1” FR4 Board. RθJA Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2011 Rev. A Page 1 of 2 SSG4940N Elektronische Bauelemente 8.3 A, 40 V, RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Pulsed Source Current(BodyDiode) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes 1 2 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. 1 Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD ISM Qg Qgs Qgd Ciss Coss Td(on) Tr Td(off) Tf Min. 30 1 20 - Typ. Static 40 0.7 5 Max. - Unit V V nA μA μA A mΩ S V A Test conditions VGS= 0V, ID= 250μA VDS= VGS, ID= 250μA VDS= 0V, VGS= 20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 8.3A VGS= 4.5V, ID= 7.3A VDS= 15V, ID= 8.3A IS= 2.3A, VGS= 0V ±100 1 25 22 27 - Dynamic 2 20 7.0 7.0 1317 272 20 9 70 20 nC ID= 10A VDS= 15V VGS= 5V N-Channel VDS=15V,VGS=0V, f=1MHz VDD= 25V ID= 1A VGEN= 10V RL= 25Ω pF nS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jan-2011 Rev. A Page 2 of 2