SSG4940NC

SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS Ratings 40 ±20 8.3 6.8 50 3.1 2.1 1.3 -55~150 Unit V V A A A W °C TA=25°C TA=70°C ID IDM IS PD TJ, TSTG TA=25°C TA=70°C Operating Junction & Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA 62.5 110 °C / W °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. B Page 1 of 4 SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Rg Min. 1 15 - Typ. Static 15 0.74 1.4 Dynamic 2 Max. - Unit V nA μA μA A mΩ S V Ω Test conditions VDS=VGS, ID=250μA VDS=0, VGS=±20V VDS=32V, VGS=0 VDS=32V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=6.6A VGS=4.5V, ID=5.6A VDS=15V, ID=6.6A IS=1.6A, VGS=0 f=1.0MHz ±100 1 25 23 30 - Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage Gate Resistance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf - 1389 169 134 13 3.4 7 8 10 37 16 nS nC pF VDS=15V, VGS=0, f=1MHz ID=6.6A VDS=20V VGS=4.5V VDs=20V ID=6.6A VGEN=10V RL=3.1Ω RGEN=6Ω Notes: 1 Pulse test：PW≦300μs duty cycle≦2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. B Page 2 of 4 SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. B Page 3 of 4 SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. B Page 4 of 4