SSG4953P

SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. SOP-8 B L D M A C N J K FEATURES  H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F E    Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability.. Extended VGS range (±25) for battery pack applications. REF. A B C D E F G REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION S Package SOP-8 MPQ 2.5K LeaderSize 13’ inch G D D D D S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS TA = 25°C TA = 70°C ID @ IDM IS PD @ TJ, TSTG TA = 25°C TA = 70°C Ratings -30 ±25 -5.2 -4.2 -30 -1.6 2.1 1.3 -55 ~ 150 Unit V V A A A A W W °C Operating Junction & Storage Temperature Range 1 Thermal Resistance Ratings Junction to Case (Max.) Notes: 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t≦5 sec t≦10 sec RθJC RθJA 40 60 °C / W °C / W Junction to Ambient (Max.) 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jan-2011 Rev. B Page 1 of 4 SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -30 19 -0.7 ±100 -1 -5 52 89 V nA μA μA A mΩ S V VDS= VGS, ID= -250μA VDS= 0V, VGS= ±25V VDS= -24V, VGS= 0V VDS= -24V, VGS= 0V, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -5.2A VGS= -4.5V, ID= -4.0A VDS= -15V, ID= -5.2A IS= -2.1A, VGS= 0V Max. Unit Teat Conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1. 2. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 15 2.2 1.7 10 2.8 53.6 46 nS nC ID= -5.2A VDS= -15V VGS= -10V VDD= -15V ID= -1A VGEN= -10V RL= 15Ω, RG= 6Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jan-2011 Rev. B Page 2 of 4 SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jan-2011 Rev. B Page 3 of 4 SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jan-2011 Rev. B Page 4 of 4