SSG5509A

SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES Lower Gate Charge RoHS Compliant H G A C N J K F E MARKING CODE REF. Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 5509ASS = Date Code PACKAGE INFORMATION Package SOP-8 MPQ 3K Leader Size 13 inch A B C D E F G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS TA=25℃ TA=70℃ ID IDM PD TJ, TSTG Ratings N-Ch P-Ch Unit V V A A A W °C W / °C 30 ±12 6.1 4.9 30 2 -55~150 0.016 -30 ±12 -4.8 -3.8 -30 Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor Thermal Resistance Ratings Maximum Thermal Resistance Junction-ambient 3 RθJA 62.5 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 1 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(TJ =25℃) IDSS Drain-Source Leakage Current(TJ =70℃) Static Drain-Source On-Resistance RDS(ON) 25 30 35 55 Total Gate Charge 2 Symbol BVDSS VGS(th) gfs IGSS Min. 30 0.5 - Typ. 15 - Max. 1.2 ±100 1 Unit V V S nA µA µA Test Conditions VGS=0, ID=250µA VDS=VGS, ID=250µA VDS=5V, ID=5A VGS= ±12V VDS=24V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5.8A m VGS=4.5V, ID=5A VGS=2.5V, ID=4A ID=5.8A VDS=15V VGS=4.5V Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 9.7 1.6 3.1 3.3 4.8 26.3 4.1 823 99 77 nS pF nC Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 VDS=15V VGS=10V RG=3 RL=2.7 VGS=0 VDS=15V f=1.0 MHz Source -Drain Diode Forward On Voltage 2 2 VSD Trr Qrr IS - 16 8.9 - 1.0 2.5 V nS nC A IS=1A, VGS=0 IS=5A, VGS=0, dl/dt =100A/µs VD=VG=0, VS=1.0V Reverse Recovery Time Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 2 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(TJ =25℃) IDSS Drain-Source Leakage Current(TJ =70℃) Static Drain-Source On-Resistance RDS(ON) Total Gate Charge 2 Symbol BVDSS VGS(th) gfs IGSS Min. -30 -0.5 - Typ. 11 9.4 2 3 6.3 3.2 38.2 12 954 115 77 Max. -1.2 ±100 -1 -25 55 70 120 - Unit V V S nA µA µA Test Conditions VGS=0, ID= -250µA VDS=VGS, ID= -250µA VDS= -5V, ID= -5A VGS= ±12V VDS= -24V, VGS=0 VDS= -24V, VGS=0 VGS= -10V, ID= -4.2A m VGS= -4.5V, ID= -4A VGS= -2.5V, ID= -1A ID= -4 A VDS= -15V VGS= -4.5V Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC nS pF VDS= -15V VGS= -10V RG=6 RL=3.6 VGS=0 VDS= -15V f=1.0 MHz Source -Drain Diode Forward On Voltage 2 2 VSD Trr Qrr IS - 20.2 11.2 - -1.0 -2.2 V nS nC A IS= -1A, VGS=0 IS= -4A, VGS=0, dl/dt=100A/µs VD=VG=0, VS= -1V Reverse Recovery Time Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 3 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 4 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 5 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 6 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jun-2011 Rev. A Page 7 of 7