SSG9435BDY

SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES Simple Drive Requirement Lower On-resistance Fast Switching H G A C N J K F E MARKING 9435BDYSC = Date Code REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4 .0 0 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 3K Leader Size 13 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM PD Ratings -30 ±20 -5.3 -4.7 -20 2.5 0.02 Unit V V A A A W W/° C ° C Total Power Dissipation Linear Derating Factor Operating Junction & Storage temperature TJ, TSTG -55~150 Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 RθJA 50 ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 1 of 4 SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance 2 Symbol BVDSS VGS(th) gfs IGSS IDSS 2 Min. -30 -1.0 - Typ. Static 5 9.8 2.2 3.4 16.4 20.2 55 10 930 148 115 Max. -2.5 ±100 -1 36 Unit V V S nA µA m Teat Conditions VGS=0, ID= -250µA VDS=VGS, ID= -250µA VDS= -5V, ID= -5.3A VGS= ±20V VDS= -30V, VGS=0 VGS= -10V, ID= -5.3A VGS= -4.5V, ID= -4.2A ID= -6A VDS= -20V VGS= -4.5V Gate-Source Leakage Current Dreain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Change 2 RDS(ON) Qg Qgs Qgd Td(On) Tr Td(OFF) Tf Ciss Coss Crss - 55 nS pF nC Gate-Source Charge Gate-Drain(“Miller”) Change Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 VDS= -24V ID= -1A VGS= -10V RG=3.3 VGS=0 VDS= -15V f=1.0MHz Source -Drain Diode Forward On Voltage 2 VSD - -0.84 -1.2 V IS= -1.7A, VGS=0V Note: 1. Surface mounted on 1 in2 copper pad of FR4 board;125℃/W when mounted on min. copper pad. 2. Pulse width limited by Max. junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 2 of 4 SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 3 of 4 SSG9435BDY Elektronische Bauelemente -5.3 A, -30 V, RDS(ON) 36 mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 4 of 4