SSG9435P

SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M A C N FEATURES  J H G K    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG TA = 25°C TA = 70°C Ratings -30 ±20 -6.5 -5.2 -30 -1.6 3.1 2.0 -55 ~ 150 Unit V V A A A A W W °C Operating Junction & Storage Temperature Range 1 Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) t ≦ 5 sec RθJC RθJA 25 40 °C / W °C / W Thermal Resistance Junction-ambient (Max.) 1 t ≦ 10 sec Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. C Page 1 of 4 SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -30 19 -0.7 ±100 -1 -5 49 75 V nA μA A mΩ S V VDS= VGS, ID= -250μA VDS= 0V, VGS= ±20V VDS= -24V, VGS= 0V VDS= -24V, VGS= 0V, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -5.7A VGS= -4.5V, ID= -5.0A VDS= -15V, ID= -5.7A IS= -2.1A, VGS= 0V Max. Unit Teat Conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 6.4 1.9 2.5 nC ID= -5.7A VDS= -15V VGS= -4.5V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) Tr Td(off) Tf 10 2.8 53.6 46 nS VDD= -15V ID= -1A VGEN= -10V RL= 15Ω RG= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. C Page 2 of 4 SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. C Page 3 of 4 SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. C Page 4 of 4