SSG9435_10

Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ SSG9435 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance PACKAGE DIMENSIONS D 8 D 7 D 6 D 5 D SOP-8 Date Code 9435SC G 1 S 2 S 3 S 4 G 6.20 5.80 0.40 0.90 0.19 0.25 45 o 0.375 REF S 0.25 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,VGS@ 10V Continuous Drain Current ,VGS@ 10V Pulsed Drain Current , Total Power Dissipation Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg P-ch Ratings -30 ±20 -5.3 -4.7 -20 2.5 -55 ~ +150 0.02 Unit V V A A A W ℃ W/℃ Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient Max. Symbol Rθj-amb Value 50 Unit ℃ /W 10-Aug-2010 Rev. C Page 1 of 5 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ SSG9435 P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃) △ Symbol BVDSS BVDSS/△Tj Min. -30 -1.0 - Typ. -0.037 10 28 3 7 9 15 75 40 745 440 120 Max. -3.0 ±100 -1 -5 55 90 - Unit V Test Conditions VGS=0, ID=-250uA V/℃ Reference to 25℃, ID=-1mA V S nA uA uA mΩ VDS=VGS, ID=-250uA VDS=-10V, ID=-5.3A VGS= ±16V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-5.3A VGS=-4.5 V, ID=-4.2 A ID=-5.3 A VDS=-15 V VGS=-10 V VDS=-15 V ID=-1 A VGS=-10 V RG=6 Ω RD=15 Ω VGS=0 V VDS=-15 V f=1.0 MHz VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Symbol VSD IS ISM Min. - Typ. -0.75 - Max. -1.2 -2.6 -20 Unit V A A Test Conditions IS=-2.6A, VGS=0 V, TJ=25°C VD = VG = 0V, VS = -1.2 V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 10-Aug-2010 Rev. C Page 2 of 5 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ SSG9435 CHARACTERISTIC CURVE 10-Aug-2010 Rev. C Page 3 of 5 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ SSG9435 CHARACTERISTIC CURVE (cont’d) 10-Aug-2010 Rev. C Page 4 of 5 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ SSG9435 CHARACTERISTIC CURVE (cont’d) 10-Aug-2010 Rev. C Page 5 of 5