SSM0410

SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES    Fast Switching Low On-resistance Logic Level Compatible SOT-223 A M 4 Top View CB 1 2 3 MARKING K E L D F Drain REF. A B C D E F G H J Gate Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Continuous Drain Current , VGS@5V Pulsed Drain Current 1,2 3 SYMBOL VDS VGS TA = 25°C TA = 70°C ID IDM PD TJ, TSTG THERMAL DATA RθJA RATING 100 ±20 3.5 2.2 14 2.7 0.02 -65~150 45 UNIT V V A A A W W/°C °C °C/W Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Maximum Junction–Ambient 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 1 of 4 SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Drain-Source On Resistance Total Gate Charge 2 SYMBOL BVDSS VGS(TH) gFS IGSS IDSS RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS VSD MIN 100 1.0 - TYP 4.0 11.2 4.4 3.0 9 9.4 26.8 2.6 975 38 27 - MAX 2.5 ±100 10 0.22 0.28 1.5 UNIT V V S nA μA Ω TEST CONDITION VGS=0V, ID =1mA VDS= 10V, ID =1mA VDS=10V, ID=2.5A VGS=±20V VDS=100V, VGS=0V VGS=10V, ID=2.6A VGS=5.0V, ID=1.7A V GS=5V VDS=80V I D=3.5A VDD=30V V GS=10V I D=1A RG=6Ω, RL=30Ω VDS=25V Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage Note: 3 2 nC nS pF VGS=0V f=1MHz SOURCE-DRAIN DIODE V VGS=0V, IS=3.5A 1. Pulse width limited by Maximum junction temperature. 2. Pulse width ≦ 300 μs, Duty cycle ≦ 2% 3. Surface mounted on 1 in copper pad of FR4 board; 120°C/W when mounted on Min. copper pad. 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 2 of 4 SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 3 of 4 SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 4 of 4