SSM2306A

SSM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSM2306A is universally used for all commercialindustrial surface mount applications. SOT-223 Featur es * Lower On-Resistance * Capable Of 2.5V Gate drive Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 REF. D REF. B J 1 2 3 4 5 Date Code 2 3 0 6A G A C D E I H G D S S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V Continuous Drain Current, VGS @4.5V Pulsed Drain Current 1,2 3 3 Symbol VD S VG S ID@TA=25 C o ID@TA=70 C o Ratings 30 ±12 5.0 4.0 20 Unit V V A A A W W / oC o IDM PD@TA=25 C o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 2. 7 0. 02 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 45 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=5A o 0.1 _ _ _ _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 ±100 1 25 30 35 50 90 15 _ _ Static Drain-Source On-Resistance _ RD S ( O N ) _ _ mΩ VGS=4.5V, ID=5 A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1 A ID=5A VDS=16V VGS= 4.5V Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 8.5 1.5 3.2 6 20 20 3 660 90 70 13 nC _ _ _ _ VDD=15V ID=5A nS VGS=10V RG=3.3Ω RD=3 Ω 1050 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=5 V, ID=5A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time2 Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=1.2A, VGS=0V. IS=5 A, VGS=0V. dl/dt=100A/us 14 7 Q rr _ Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, dutycycle≦2%. 2 o 3. Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 120 : /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4