SSM452

SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES    Simple Drive Requirement Lower On-resistance Fast Switching SOT-223 A M 4 Top View CB 1 2 3 MARKING  Drain K E L D F G H J  Gate REF. A B C D E F  Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 3 1 RATING -30 ±20 -6.0 -4.8 -20 2.7 0.02 -55 ~ 150 45 UNIT V V A A A W W / °C °C °C / W VDS VGS TA = 25°C TA = 70°C ID IDM PD TJ, TSTG Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Maximum Junction–Ambient 3 THERMAL DATA RθJA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Jun-2010 Rev. A Page 1 of 4 SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current (TJ= 25°C) Drain-Source Leakage Current (TJ= 70°C) Drain-Source On Resistance Total Gate Charge 2 SYMBOL BVDSS △BVDSS / △TJ VGS(TH) gFS IGSS MIN -30 -1.0 - TYP -0.02 10 45 75 9.2 2.8 5.2 11 8 25 17 507 222 158 MAX -3.0 ±100 -1 UNIT V V / °C V S nA TEST CONDITION VGS= 0V, ID = -250uA Reference to 25°C, ID= -1mA VDS= VGS, ID = -250uA VDS= -10V, ID= -5.3A VGS= ±20V VDS= -30V, VGS=0V IDSS RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS -25 55 100 16 912 - μA VDS= -24V, VGS=0V mΩ VGS= -10V, ID= -5.3A VGS= -4.5V, ID= -4.2A VGS= -4.5V nC VDS= -24V ID= -5.3A VDS= -15V nS VGS= -10V ID= -1A RG= 6Ω, RD= 15Ω VDS= -15V pF VGS= 0V f= 1MHz Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width ≦ 300 μs, Duty cycle ≦ 2% 3. Surface mounted on 1 in copper pad of FR4 board; 120°C / W when mounted on Min. copper pad. 2 VSD Trr Qrr - 29 20 -1.2 - V nS nC VGS= 0V, IS= -2.3A VGS= 0V, IS= -5.3A, dl/dt= 100A/μs http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Jun-2010 Rev. A Page 2 of 4 SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Jun-2010 Rev. A Page 3 of 4 SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Jun-2010 Rev. A Page 4 of 4