SSM9973A

SSM9973A Elektronische Bauelemente 5 A, 60V N-Channel Enhancement Mode Power MOSFET SOT-223 A M 4 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM9973A provide the designer with the best combination of fast switching, ruggedized design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Top View CB 1 2 3 K E L D FEATURES Simply drive requirement Super high density cell design for extremely low RDS(ON) F G H J REF. A B C D E F Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Continuous Drain Current3, VGS@10V Pulsed Drain Current 1,2 SYMBOL VDS VGS TA = 25° C TA = 70° C ID IDM PD RθJA TJ, TSTG RATING 60 ±20 5.0 4.0 10 2.7 45 0.02 150, -55~150 UNIT V V A A A W ° C/W W/° C ° C Total Power Dissipation, TA = 25° C Maximum Junction – Ambient3 Linear Derating Factor Operating Junction & Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Current C Leakage TA = 25° TA = 70° C SYMBOL BVDSS VGS(TH) gFS IGSS IDSS RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS VSD MIN 60 0.5 - TYP 12 4.0 1.2 1.0 6 12 18 10 320 42 20 - MAX 1.5 ±100 1 10 115 125 1.2 UNIT V V S nA µA m VGS=0V, ID =250µA VDS=15V, ID=4A VGS=±20V V DS=60V, VGS=0V VDS=60V, VGS=0V VGS=10V, ID=5A VGS=4.5V, ID=4.5A V GS=4.5V VDS=30V I D=4A VDD=30V V GS=10V I D=2.5A RG=6 , RL=12 VDS=30V VGS=0V f=1MHz VGS=0V, I S=2.5A TEST CONDITION VDS= VGS, ID =250µA Drain-Source On Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage2 nC nS pF SOURCE-DRAIN DIODE CHARACTERISTICS Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width≦300µS, Duty cycle≦2% 3. Surface mounted on 1 in2 copper pad of FR4 board; 120° C/W when mounted on m in, copper pad. 29-Jan-2010 Rev. A V Page 1 of 3 SSM9973A Elektronische Bauelemente 5 A, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 29-Jan-2010 Rev. A Page 2 of 3 SSM9973A Elektronische Bauelemente 5 A, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 29-Jan-2010 Rev. A Page 3 of 3