SSP7150N

SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOP-8PP B Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. D APPLICATIONS    C θ e E White LED boost converters. Automotive Systems. Industrial DC/DC Conversion Circuits. d A b g PACKAGE INFORMATION Package SOP-8PP MPQ 3K Leader Size 7’ inch G F REF. A B C D E F G Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TJ, TSTG Rating 150 ±20 3.6 2.9 20 6.2 5 3.2 -55~150 Unit V V A A A W °C TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady State RθJA 25 65 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 1 of 4 SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Symbol VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD Min Static 1 10 - Typ 10 0.76 2 Max ±10 1 10 255 290 - Unit V nA μA A mΩ S V Test condition VDS=VGS, ID=250μA VDS=0, VGS= ±20V VDS=120V, VGS=0 VDS=120V, VGS=0,TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=2.9A VGS=4.5V, ID=2.7A VDS=15V,,ID=2.9A IS=3.1A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf Ciss Coss Crss - 10.8 3.3 5.6 10.1 10 50 22 848 69 29 pF nS nC ID=2.9A VDS=75V VGS=4.5V ID=2.9A, VDD=75V VGEN=10V RL=25.9Ω, RGEN=6Ω VDS=15V, VGS=0, f=1MHz Notes: 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 2 of 4 SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 3 of 4 SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 4 of 4