SSP7431P

SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D SOP-8PP B FEATURES  C θ e E    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. A d b g APPLICATION F DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. G REF. A B C D E F G PACKAGE INFORMATION Package SOP-8PP MPQ 3K Leader Size 7’ inch Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TJ, TSTG TA=25°C TA=70°C Rating -30 ±20 -17 -14 -50 -2.1 5.0 3.2 -55~150 Unit V V A A A W °C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 25 65 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-May-2011 Rev. B Page 1 of 4 SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD Min. Static -30 -1 -50 - Typ. 29 -0.8 2 Max. ±100 -1 -5 13 19 - Unit V V nA μA A mΩ S V Teat Conditions VGS=0, ID = -250μA VDS=VGS, ID = -250μA VDS=0, VGS= ±25V VDS= -24V, VGS=0 VDS= -24V, VGS=0, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -11.5A VGS= -4.5V, ID= -9.3A VDS= -15V,,ID= -11.5A IS=2.5A, VGS=0 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 25 11 17 15 13 100 54 nS nC ID= -11.5A VDS= -15V VGS= -5V ID= -1A, VDD= -15V VGEN= -10V RL=6Ω Notes: 1. Pulse test：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-May-2011 Rev. B Page 2 of 4 SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-May-2011 Rev. B Page 3 of 4 SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-May-2011 Rev. B Page 4 of 4