SSP7432N

SSP7432N Elektronische Bauelemente 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B D C θ e E FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. d A b g F G Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 RDS(on) (m 4.9@VGS= 4.5V 5.9@VGS= 2.5V ID(A) 27 24  Gate REF. A B C D E F G REF. θ b d e g  Drain  Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Continuous Source Current (Diode Conduction) A Power Dissipation A B SYMBOL VDS VGS TA=25°C TA=70°C ID IDM IS RATING 30 12 24 20 60 2.9 5.0 3.2 -55 ~ 150 25 65 UNIT V V A A A W °C °C / W TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦10 sec Maximum Junction to Ambient A RθJA Steady-State Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jul-2010 Rev. A Page 1 of 2 SSP7432N Elektronische Bauelemente 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source On-Resistance A Forward Transconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD 1 30 90 0.7 100 1 5 4.9 5.9 V nA μA A mΩ S V VDS = VGS, ID = 250μA VDS = 0V, VGS= 12V VDS = 24V, VGS= 0V VDS = 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 4.5V, ID = 24A VGS= 2.5V, ID = 21A VDS= 15V,,ID = 24A IS= 2.3A, VGS= 0V TEST CONDITIONS Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 25 6 9 20 13 82 43 nC ID= 24A VDS= 15V VGS= 4.5V ID= 1A, VDD= 15V nS VGEN= 10V RL= 6Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jul-2010 Rev. A Page 2 of 2