SSPS7330N

SSPS7330N Elektronische Bauelemente 11 A , 30 V, RDS(ON) 22 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DFN3x3-8PP B D C FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E θ A d b g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F G PACKAGE INFORMATION Package DFN3x3-8PP MPQ 3K Leader Size 13 inch Top View REF. A B C D E F G Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25° C TA=70° C ID IDM IS PD TJ, TSTG TA=25° C TA=70° C Ratings 30 ±20 11 9 40 2.9 3.5 2.0 -55~150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA 35 81 ° /W C ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 1 of 4 SSPS7330N Elektronische Bauelemente 11 A , 30 V, RDS(ON) 22 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Max. Unit Teat Conditions VGS(th) IGSS IDSS 1 - 40 0.7 ±100 1 V nA µA VDS=VGS, ID=250µA VDS=0, VGS= ±20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55° C 25 22 m 30 2 ID(on) 1 20 - A VDS=5V, VGS=10V VGS=10V, ID=9.2A VGS=4.5V, ID=7A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - S V VDS=15V, ID=9.2A IS=2.3A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 40 1.1 1.4 720 165 60 16 5 23 3 nS pF nC VDS=10V, VGS=4.5V, ID=7A VDS=15V, VGS=0 f=1MHz VDD=10V ID=1A VGEN=10V RL=6 Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 2 of 4 SSPS7330N Elektronische Bauelemente 11 A , 30 V, RDS(ON) 22 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 3 of 4 SSPS7330N Elektronische Bauelemente 11 A , 30 V, RDS(ON) 22 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 4 of 4