SSPS7332N

SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. DFN3x3-8PP B D C FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E θ A d b g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F PACKAGE INFORMATION Package DFN3x3-8PP MPQ 3K Leader Size 13 inch G Top View REF. A B C D E F G Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25° C TA=70° C ID IDM IS PD TJ, TSTG TA =25° C TA =70° C Ratings 30 ±20 17 11 50 2.3 3.5 2.0 -55~150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 1 t ≦ 5 sec t ≦ 5 sec RθJC RθJA 25 50 ° /W C ° /W C Thermal Resistance Junction-Ambient (Max.) Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 1 of 4 SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) 1 Min. 1 20 - Typ. Static 40 0.7 Max. ±100 1 Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55° C 25 13.5 m 20 2 A VDS=5V, VGS=10V VGS=10V, ID=10A VGS=4.5V, ID=8A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - S V VDS=15V, ID=10A IS=2.3A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 12.5 2.6 4.6 20 9 70 20 nS nC VDS=15V VGS=4.5V ID=10A VDD=25V ID=1A VGEN=10V RL=25 Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 2 of 4 SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 3 of 4 SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2011 Rev. A Page 4 of 4