SSPS922NE

SSPS922NE Elektronische Bauelemente 8.2 A , 20 V , RDS(ON) 17.5 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. DFN3x3-8PP B D C FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E θ A d b g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. G F PACKAGE INFORMATION Package DFN3x3-8PP MPQ 3K Leader Size 13 inch REF. A B C D E F G Top View Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings 20 ±8 8.2 6 40 2.1 1.5 0.8 -55~150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range t ≦ 10sec Steady State Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 RθJA 83 120 ° /W C ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Mar-2012 Rev. A Page 1 of 4 SSPS922NE Elektronische Bauelemente 8.2 A , 20 V , RDS(ON) 17.5 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) 1 Min. 0.4 15 - Typ. Static 25 0.68 Max. ±100 1 Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=±8V VDS=16V, VGS=0 VDS=16V, VGS=0, TJ=55° C 25 17.5 m 22 2 A VDS=5V, VGS=4.5V VGS=4.5V, ID=2A VGS=2.5V, ID=2A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - S V VDS=10V, ID=6.6A IS=1.1A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 11 2.7 2.1 877 88 254 57 87 604 198 nS pF nC VDS=10V, VGS=4.5V, ID=6.6A VDS=15 V, VGS=0 f=1MHz VDS=10V ID=6.6A VGEN=4.5V RL=1.6 RGEN=6 Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Mar-2012 Rev. A Page 2 of 4 SSPS922NE Elektronische Bauelemente 8.2 A , 20 V , RDS(ON) 17.5 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Mar-2012 Rev. A Page 3 of 4 SSPS922NE Elektronische Bauelemente 8.2 A , 20 V , RDS(ON) 17.5 mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Mar-2012 Rev. A Page 4 of 4