SSQ5N50

SSQ5N50 Elektronische Bauelemente 4.5A, 500V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free D C TO-220P FEATURES    Low RDS(on) Technology. Low thermal impedance. Fast switching speed. G B R E A T S APPLICATIONS    Electronic ballast. Electronic transformer Switch mode power supply. F H I J K L X M U P N O V Q 123 Q W Dimensions in millimeters  Drain REF. A B C D E F G H J K L M  Gate  Source Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 UNIT V V A A A W °C °C / W °C / W VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC 1 500 ±20 4.5 18 4.5 74 -55 ~ 175 62.5 1.7 Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. THERMAL RESISTANCE RATINGS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev.A Page 1 of 4 SSQ5N50 Elektronische Bauelemente 4.5A, 500V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage SYMBO MIN. TYP. MAX. UNIT Static VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 2 5 2.5 1.6 4 ±100 25 250 1500 V nA μA A mΩ S V TEST CONDITIONS VDS= VGS, ID = 250 μA VDS = 0V, VGS= ±20V VDS= 500V, VGS= 0V VDS= 400V, VGS= 0V, TJ=125°C VDS = 10V, VGS= 10V VGS= 10V, ID= 2.7 A VDS= 50V, ID= 2.7 A IS= 4.5 A, VGS= 0 V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf CISS COSS CRSS 26 4 15 12.8 7.4 38 19.6 623 112 24 pF nS nC VDS = 400 V VGS = 10 V ID = 3.1 A VDD= 250 V ID= 3.1 A VGEN = 10 V RL= 79  RGEN = 12  VDS = 25 V VGS = 0 V f = 1MHz Notes 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev.A Page 2 of 4 SSQ5N50 Elektronische Bauelemente 4.5A, 500V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev.A Page 3 of 4 SSQ5N50 Elektronische Bauelemente 4.5A, 500V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev.A Page 4 of 4