SSRF4N60

SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. ITO-220 B N D E M A FEATURES Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. H 2 Drain J K L A B C D E F G Millimeter Min. Max. 14.60 15.70 9.50 10.50 12.60 14.00 4.30 4.70 2.30 3.2 2.30 2.80 0.30 0.70 C G F REF. H J K L M N Millimeter Min. Max. 2.70 3.80 0.90 1.50 0.50 0.90 2.34 2.74 2.40 3.00 φ 3.0 φ 3.4 L REF. 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS(TC=25°C unless otherwise specified ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 2 Symbol VDS VGS ID IDM PD Ratings 600 ±30 4.0 16 33 0.26 Unit V V A A W W/° C mJ mJ °C Derating factor above 25° C Single Pulsed Avalanche Energy Repetitive Avalanche Energy 2 1 EAS EAR TJ, Tstg 330 7.3 150,-55~150 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient Maximum Junction to Case RθJA RθJC 62.5 ° /W C 3.79 Notes: 1. L=30mH, IAS=4.4A, VDD=85V, RG=25 , Starting TJ=25° C 2. Repetitive Rating: Pulse width limited by maximum junction temperature http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Jul-2011 Rev. A Page 1 of 4 SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage Drain-Source On-Resistance Drain-Sounce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS(th) RDS(ON) BVDSS IDSS IGSSF IGSSR 2.0 600 2.0 4.0 2.4 10 100 -100 V µA nA nA V VDS=VGS, ID=250µA VGS=10V, ID=2A VGS=0, ID=250µA VDS=600V, VGS=0 VGS=30V, VDS=0 VGS= -30V, VDS=0 Dynamic Total Gate Charge 1.2 1.2 Qg Qgs Qgd Td(on) Tr - 19.8 4 7.2 27 19 160 22 672 nS VDD=300V, ID =4.4A, RG=25 nC VDS=480V, ID=4.4A, VGS=10V Gate-Source Charge Gate-Drain Charge 1.2 1.2 Turn-on Delay Time Rise Time 1.2 Turn-off Delay Time Fall Time 1.2 1.2 Td(off) Tf Ciss Coss Crss IS ISM VSD Trr 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge - 66 4.7 300 2.2 4.0 16 1.4 - pF VDS=25V, VGS=0, f =1.0MHz A A V nS µC VGS=0, IS=4.0A VGS=0, IS=4.0A, IF / dt =100A/µs Qrr Notes: 1. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 2. Basically not affected by working temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Jul-2011 Rev. A Page 2 of 4 SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Jul-2011 Rev. A Page 3 of 4 SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Jul-2011 Rev. A Page 4 of 4