SST2604_10

SST2604 Elektronische Bauelemente 5.5A, 30V,RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description The SST2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2604 is universally used for all commercial-industrial applications. 1.90REF 0.95REF 0.95REF 1.2 REF 0.45 REF 2.60 3.00 1.40 1.80 0.30 0.55 2.70 3.10 0.60 REF 0.10 Max Features * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D 0 o 10 o 0.7 1.45 Dimensions in millimeters D 6 D 5 S 4 Date Code G 1 2604 S 2 3 D D G Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1 ,2 3 3 Symbol VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o Ratings 30 ± 20 5.5 4.4 20 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case 3 Symbol Max. Rthj-c Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 15-Jun-2010 Rev. C Page 1 of 4 SST2604 Elektronische Bauelemente 5.5 A, 3 0V,RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=55 C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A ID=4.8A VDS=24V VGS= 4.5V o 0.02 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 45 65 10 _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 6 2 3 6 8 15 4 440 105 35 7 nC _ _ _ _ VDD=15V ID=1A nS VGS=10V RG=3.3Ω RD=15Ω 705 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS =10V, ID=4.8A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=4.8A, VGS=0V. IS=4.8A , VGS=0V. dl/dt=100A/us 15 7 Reverse Recovery Change Q rr _ Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 15-Jun-2010 Rev. C Page 2 of 4 SST2604 5.5A, 3 0V,RDS(ON) 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of http://www.SeCoSGmbH.com/ Reverse Diode 15-Jun-2010 Rev. C Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page3 of 4 SST2604 5.5A, 3 0V,RDS(ON) 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 15-Jun-2010 Rev. C Page 4 of 4