SST2610

SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10 REF. G H I J K L Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current VGS@4.5V, TA=25℃ 3 Continuous Drain Current VGS@4.5V, TA=70℃ Pulsed Drain Current 1,2 Power Dissipation TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID ID PD Tj, Tstg Ratings 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150 Unit V V A A A W W/ ℃ ℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 62.5 Unit ℃/W RθJA 01-June-2005 Rev. A Page 1 of 4 SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (TJ=25℃) Symbol BVDSS ΔBVDSS /ΔTJ VGS(th) Min. 60 1.0 - Typ. 0.05 5.0 - Max. 3.0 ±100 10 25 90 120 Unit V V/ V S ℃ Test Conditions VGS = 0, ID = 250uA Reference to 25℃, ID=1mA VDS=VGS, ID=250uA VDS = 5V, ID=3A VGS= ±20V VDS=60V, VGS=0 VDS=48V, VGS=0 gfs IGSS IDSS nA Drain-Source Leakage Current (TJ=70℃) Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss mΩ VGS=10V, ID=3A VGS=4.5V, ID=2A ID=3A VDS=48V VGS=4.5V VDS=30V ID=1A VGS=10V RG=3.3Ω RD=30Ω VGS=0V VDS=25V f=1.0MHz 6 1.6 3 6 5 16 3 490 55 40 10 780 pF ns ns Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Notes: Symbo VSD Trr Qrr Min. - Typ. 25 26 Max. 1.2 - Unit V ns nC Test Conditions IS = 1.2 A, VGS = 0 V IS=3A, VGS=0V dI/dt=100A/μs 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle ≦ 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, 156°C/W when mounted on min. copper pad. 01-June-2005 Rev. A Page 2 of 4 SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 4 SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES (cont’d) F=1.0 MHz 01-June-2005 Rev. A Page 4 of 4