STT3402N

STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E 6 5 4 TSOP-6 L B TYPICAL APPLICATIONS  F DG 1 2 3 C K H J    Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Gate Charge. Fast Switch. Miniature TSOP-6 Surface Mount Package Saves Board Space. REF. A B C D E F PRODUCT SUMMARY VDS(V) 30 STT3402N RDS(on) (m 0.027@VGS= 10V 0.035@VGS= 4.5V ID(A) 6.3 5.5 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D S PACKAGE INFORMATION G Package TSOP-6 MPQ 3K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings Maximum Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range TA= 25°C TA= 70°C PD Tj, Tstg 30 ±20 6.3 5.2 ±20 1.3 1.6 1.0 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Notes 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 5 sec Symbol RJA Maximum 78 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Nov-2010 Rev. A Page 1 of 4 STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions SWITCH OFF CHARACTERISTICS Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS IGSS IDSS 30 ±100 1 uA 10 V nA VGS=0V, ID= 250uA VDS= 0V, VGS= ±20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C SWITCH ON CHARACTERISTICS Gate-Threshold Voltage On-State Drain Current 1 VGS(th) ID(on) 1.0 20 Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage 1 gfs VSD 1.6 23 32 29 45 0.75 3.0 27 39 35 1.2 S V mΩ V A VDS=VGS, ID= 250uA VDS = 5V, VGS= 10V VGS= 10V, ID= 6.3A VGS= 10V, ID= 6.3A, TJ= 55°C VGS= 4.5V, ID= 5.5A VDS= 10V, ID= 6.3A IS= 1.3A, VGS= 0V DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 9 2.9 3.2 13 nC VDS= 15V, VGS= 5V, ID= 6.3A, RL= 6 SWITCHING CHARACTERISTICS Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Td(on) Tr Td(off) Tf - 6 10 18 5 13 19 nS 30 13 VDS= 15V, VGEN= 10V, RL= 6, ID= 1A, RGEN= 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Nov-2010 Rev. A Page 2 of 4 STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Nov-2010 Rev. A Page 3 of 4 STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Nov-2010 Rev. A Page 4 of 4