STT3405P

STT3405P Elektronische Bauelemente -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A E 6 5 4 TSOP-6 L B F DG 1 2 3 C K H J FEATURES    Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. High power and current handling capability. REF. A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -20 ±12 -4.9 -4.0 -20 -1.7 2 1.3 -55 ~ 150 62.5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec RJA °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 1 of 4 STT3405P Elektronische Bauelemente -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 VGS(th) IGSS IDSS ID(on) -0.7 -15 Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD 11 -0.8 ±100 -1 μA -5 56 80 150 S V mΩ A V nA VDS= VGS, ID= -250μA VDS= 0V, VGS= ±12V VDS= -16V, VGS= 0V VDS= -16V, VGS= 0V, TJ= 55°C VDS = -4.5V, VGS= -4.5V VGS= -4.5V, ID= -4.9A VGS= -2.5V, ID= -4.2A VGS= -1.8V, ID= -3.1A VDS= -10V, ID= -4.9A IS= 1.7A, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 8 1.8 1.9 22 35 45 25 nS VDD= -10V, VGEN= -4.5V, RL= 6, ID= -1A nC VDS= -10V, VGS= -4.5V, ID= -4.9A Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 2 of 4 STT3405P Elektronische Bauelemente -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 3 of 4 STT3405P Elektronische Bauelemente -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 4 of 4