STT3423P

STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E TSOP-6 L B FEATURES     F DG K C H J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -20 RDS(on) (m 42@VGS= -4.5V 57@VGS= -2.5V 80@VGS= -1.8V 6 5 4 ID(A) -5.7 -4.9 -4.1  Gate Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.  Drain  1 2 3  Source ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings Maximum Unit V V A A A W °C -20 ±8 -5.7 -4.7 ±20 -1.7 2.0 1.3 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 5 sec Steady State Symbol RJA Maximum 50 90 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Jul-2010 Rev. A Page 1 of 4 STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a a Symbol Min. VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -0.4 -20 - Typ. Max. 10 -0.7 ±100 -1 -5 42 57 80 - Unit V nA uA A Test Conditions VDS=VGS, ID= -250uA VDS= 0V, VGS= ±8V VDS= -16V, VGS= 0V VDS= -16V, VGS=0 V, TJ= 55°C VDS = -4.5V, VGS= -4.5 V VGS= -4.5V, ID= -5.7A VGS= -2.5V, ID= -4.9A VGS= -1.8V, ID= -4.1A VDS= -10V, ID= -4.9A IS= 1.7A, VGS= 0V mΩ Forward Transconductance Diode Forward Voltage a - S V DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 8 1.8 1.9 22 35 45 25 nS VDD= -10V, VGEN= -4.5V, RL= 6, ID= -1A nC VDS= -10V, VGS= -4.5V, ID= -5.7A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Jul-2010 Rev. A Page 2 of 4 STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Jul-2010 Rev. A Page 3 of 4 STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Jul-2010 Rev. A Page 4 of 4