STT3434N

STT3434N Elektronische Bauelemente 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F A E 6 5 4 TSOP-6 L B 1 2 3 FEATURES  C K H J    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology DG REF. A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings 30 ±12 6.0 4.6 20 1.6 2 1.3 -55 ~ 150 62.5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec Steady State RJA °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 1 of 2 STT3434N Elektronische Bauelemente 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 0.7 10 11.3 0.75 1.5 ±100 1 μA 10 32 mΩ 44 S V A V nA VDS=VGS, ID= 250μA VDS= 0V, VGS= ±8V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID= 6.0A VGS= 2.5V, ID= 5.0A VDS= 10V, ID= 4.0A IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 6 1 1.5 8 24 35 10 nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A nC VDS= 10V, VGS= 4.5V, ID= 4.0A Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 2 of 2