STT3458N

STT3458N Elektronische Bauelemente 3.4 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E 6 5 4 TSOP-6 L B F DG 1 2 3 C K H J FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature TSOP-6 surface mount package saves board space REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch D G D S D D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings 60 ±20 3.4 2.7 ±15 1.7 2 1.3 -55 ~ 150 62.5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Notes 1. 2. TA= 25°C TA= 70°C PD Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec Steady State RJA °C / W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 1 of 2 STT3458N Elektronische Bauelemente 3.4 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol Min. VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 1 10 - Typ. Max. 8 1.10 ±100 1 50 92 Unit V nA A A mΩ Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 10V VGS= 10V, ID= 3.4A VGS= 4.5V, ID= 3.1A 107 S V VDS= 4.5V, ID= 3.4A IS= 1.7A, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes 1. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 3.6 1.8 1.3 10 10 20 10 nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A nC VDS= 30V, VGS= 5V, ID= 3.4A 2. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 2 of 2