STT3458N_12

STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A E 6 5 4 TSOP-6 L FEATURES  B    Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature TSOP-6 surface mount package saves board space F DG 1 2 3 C K H J REF. APPLICATION Power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch D D G D D S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS TA= 25°C TA= 70°C ID IDM IS TA= 25°C TA= 70°C PD TJ, TSTG Ratings 60 ±20 3.4 2.7 ±15 1.7 2 1.3 -55 ~ 150 Unit V V A A A W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady State RθJA 62.5 110 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Mar-2012 Rev. B Page 1 of 4 STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 10 - Typ. 8 1.1 2 Max. ±100 1 50 92 107 - Unit V nA μA A mΩ S V Test Conditions VDS=VGS, ID=250μA VDS=0, VGS= ±20V VDS=48V, VGS=0 VDS=48V, VGS=0, TJ= 55°C VDS =5V, VGS=10V VGS=10V, ID=3.4A VGS=4.5V, ID=3.1A VDS=4.5V, ID=3.4A IS=1.7A, VGS=0 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 3.6 1.8 1.3 10 10 20 10 nS nC VDS=30V, VGS=5V, ID=3.4A VDD=30V, VGEN=10V, RL=30Ω, ID=1A Notes 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Mar-2012 Rev. B Page 2 of 4 STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Mar-2012 Rev. B Page 3 of 4 STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Mar-2012 Rev. B Page 4 of 4