STT3463P

STT3463P Elektronische Bauelemente -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A E 6 5 4 TSOP-6 L FEATURES  B    Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. F DG 1 2 3 C K H J REF. A B C D E F APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. D Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -60 ±20 -3.0 -2.4 -15 -1.7 2.0 1.3 -55 ~ 150 Unit V V A A A W °C ID IDM IS TA= 25°C TA= 70°C PD Tj, Tstg Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 08-Apr-2011 Rev. A Page 1 of 2 STT3463P Elektronische Bauelemente -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. -1 -20 - Typ. 8 2 Max. ±100 -1 -10 155 230 -1.2 Unit V nA μA A mΩ S V Test Conditions VDS= VGS, ID= -250μA VDS=0, VGS= ±20V VDS= -48V, VGS=0 VDS= -48V, VGS=0, TJ= 55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -3A VGS= -4.5V, ID= -2.5A VDS= -15V, ID= -3.0A IS= -2.5A, VGS=0 Static Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 18 5 2 8 10 35 12 nS nC VDS= -30V, VGS= -4.5V, ID= -3A VDD= -30V, VGEN= -10V, RL=30Ω, ID= -1A, RG=6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 08-Apr-2011 Rev. A Page 2 of 2