STT3471P

STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. A E 6 5 4 TSOP-6 L FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. B F DG 1 2 3 C K H J APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS TA= 25°C TA= 70°C ID IDM IS TA= 25°C TA= 70°C PD Tj, Tstg Rating -100 ±20 2.0 1.6 -8 -2.1 2.0 1.3 -55~150 Unit V V A A A W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 08-Apr-2011 Rev. A Page 1 of 2 STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. -1 -20 - Typ. 2.8 - Max. ±100 -1 -10 350 450 -1 Unit V nA μA A mΩ S V Test Conditions VDS= VGS, ID= -250μA VDS=0, VGS= ±20V VDS= -80V, VGS=0 VDS= -80V, VGS=0, TJ= 55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -1.4A VGS= -4.5V, ID= -1.2A VDS= -15V, ID= -1.4A IS= -1.4A, VGS=0 Static Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 6 10 3 3 3 13 7 nS nC VDS= -30V, VGS= -4.5V, ID= -1.4A VDD= -30V, VGEN= -10V, RL=30Ω, ID= -1A, RG= 6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 08-Apr-2011 Rev. A Page 2 of 2