STT3520C

STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E TSOP-6 L B FEATURES  F DG K C H J  Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Miniature TSOP-6 Surface Mount Package Saves Board Space. REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings N-Channel P-Channel Unit V V A A A W ℃ Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range 23 ±12 3.7 2.9 8 1.05 -23 ±12 -2.7 -2.1 -8 -1.05 1.15 0.7 -55 ~ +150 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 1 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Parameter Maximum Junction to Ambient 1 Notes 1 2 THERMAL RESISTANCE RATINGS N-Channel Symbol Typ Max 93 110 t ≦ 10 sec RJA Steady State 130 150 P-Channel Typ Max 93 110 130 150 Unit ℃/W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current P-Ch N-Ch P-Ch On-State Drain Current 1 N-Ch P-Ch N-Ch P-Ch Drain-Source On-Resistance 1 Symbol Min. VGS(th) IGSS 1 -1 IDSS ID(on) 5 -5 RDS(ON) gfs VSD - Typ. Max. 10 5 0.80 -0.83 100 -100 1 -1 10 -10 58 112 82 172 160 210 - Unit V Test Conditions VDS=VGS, ID=250uA VDS=VGS, ID= -250uA VDS= 0 V, VGS= 12 V VDS= 0 V, VGS= -12 V VDS=16 V, VGS=0 V VDS=-16V, VGS=0 V VDS=16V, VGS=0 V, TJ=55℃ VDS= -16V, VGS=0 V, TJ=55℃ Gate-Body Leakage Current uA uA A VDS = 5V, VGS=4.5 V VDS = -5V, VGS= -4.5 V VGS=4.5V, ID= 3.7A VGS=-4.5V, ID= 3.1A VGS=2.5V, ID= 2.7A VGS=-2.5V, ID= -2.2A VGS=1.8V, ID= 2.2A VGS=-1.8V, ID= -2.0A VDS= 5V, ID= 3.7A VDS= -5V, ID= 3.1A IS= 1.05A, VGS= 0V IS= -1.05A, VGS= 0V N-Ch P-Ch N-Ch P-Ch mΩ Forward Transconductance 1 Diode Forward Voltage 1 N-Ch P-Ch N-Ch P-Ch S S http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 2 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET DYNAMIC 2 Total Gate Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf 7.5 3.8 0.6 0.6 1.0 1.5 5 5 12 15 13 20 7 20 nS P-Channel VDD= -15V, RGEN= 15Ω VGS= -4.5V, ID= -1A N-Channel VDD= 15V, RGEN= 15Ω, VGS= 4.5V, ID= 1A nC P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 3 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 4 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 5 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 6 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2010 Rev. A Page 7 of 7